The AB linear design operates over the 9.2-to-10.0 GHz frequency range, and features options for control of phase and amplitude to allow for integration into high-power systems using conventional binary or phased array combining approaches for power levels to 10 kilowatts.
Consistent with its planned technology development roadmap, Comtech is leading the field with the latest in GaN-based RF device performance and advanced amplifier development.
Features for this X-band radar amplifier include high output power dynamic range; high efficiency; RF input and output sample detectors; pulse width and duty factor protection; thermal and load voltage standing wave ratio (VSWR) protection; optional digital interface for control and status monitoring; optional phase and amplitude control; applicability as a building block for phased array systems.
Specifications include peak output power of 1000 Watts; power gain of 60dB nominal; power gain variation of ±2 dB (9.2-10 Ghz); pulse width of 0.25 to 100 microseconds max; duty cycle of 10 percent max; pulse droop of less than 0.5dB; pulse rise and fall time of less than 60 nanoseconds typical; input VSWR of less than 1.5:1; and output load VSWR of less than 2:1.
The amplifier operates in temperatures from -40 to 65 degrees Celsius at the baseplate; works in zero to 95 percent non-condensing humidity; resists shock and vibration per MIL-STD-810F; operates at altitudes to 10,000 feet; measures 9.6 by 6.8 by 2.15 inches, and weighs 5 pounds.
For more information contact Comtech PST online at www.comtechpst.com.
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