The module gallium nitride (GaN)-based 6-to-18 GHz RF amplifier has an RF power output of more than 50 Watts typical, and gain at 50 Watts of more than 47 decibels typical.
The RF and microwave device has maximum RF input overdrive of +10 dBm; gain flatness at 40 Watts of plus-or-minus 4dB; AB linear class of operation; DC input of 28 volts; DC power at standby of less than 15 Watts; and 14 percent DC-to-RF efficiency of 15 percent.
The amplifier has SMA female field-replaceable RF connectors, operates in temperatures from -40 to 55 degrees Celsius at the baseplate, and meets MIL-STD-810F for shock and vibration.
The unit measures 6.56 by 3.5 by 0.84 inches, weighs 1.5 pounds, and has a noise power output of -105dBm/Hz. For more information contact Comtech PST online at www.comtechpst.com.