The input-protected low-noise amplifiers consists of 12 different models that cover frequency bands ranging from 10 MHz to 3.5 GHz.
These designs exhibit typical performance that includes low noise figure levels from 0.8 to 1.6 decibels, high-small signal gain ranging from 25 to 40 decibels, and voltage standing wave ratio (VSWR) levels from 1.3:1 to 1.5:1.
This performance comes from hybrid microwave integrated circuit designs that incorporate PIN diode limiter circuitry and enhancement mode (Emode) gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) semiconductor devices.
These low-noise amplifiers operate with a bias voltage of 12 volts typical over temperatures from -40 to 85 degrees Celsius. The 50 Ohm, SMA connectorized modules are unconditionally stable, include built-in voltage regulation, and have DC blocking capacitors on the RF ports.
For more information contact Pasternack online at www.pasternack.com.
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