High-power GaN RF amplifier for aerospace and defense applications introduced by Aethercomm

SAN MARCOS, Calif., 15 Sept. 2013. Aethercomm Inc. in San Marcos, Calif., is introducing the SSPA 6.000-18.000-50 high-power super -broadband gallium nitride (GaN) RF amplifier for aerospace and defense applications.

Posted by John Keller
Posted by John Keller

SAN MARCOS, Calif., 15 Sept. 2013. Aethercomm Inc. in San Marcos, Calif., is introducing the SSPA 6.000-18.000-50 high-power super -broadband gallium nitride (GaN) RF amplifier for aerospace and defense applications.

The RF and microwave amplifier operates from 6 to 18 GHz, offers high power over a multi-decade bandwidth with power added efficiency, and operates at a base plate temperature -40 to 55 degrees Celsius.

It is packaged in a modular housing that measures 8.5 by 3.5 by 1.38 inches, and has a typical P3dB of 40 Watts at room temperature with a minimum of 25 Watts.

Noise figure at room temperature is 12 dB typical. This amplifier offers a typical power gain of 47 dB with a typical gain flatness of plus-or-minus 1.0 dB. The power and gain flatness across the band is extremely flat for the bandwidth.

Input VSWR is 2.0:1 maximum. Class AB quiescent current is 8.5 amps typical employing a 26-volt DC supply. This SSPA includes an external DC blanking command that enables and disables the module in less than 20 microseconds.

A logic low or open circuit commands the PA OFF. A logic high commands this amplifier ON. Standard features include over/under voltage protection and reverse polarity protection.

Input and output RF connectors are SMA female. DC and command voltages are accessible via a DSUB connector. For more information contact Aethercomm online at www.aethercomm.com.

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