GaN RF and microwave amplifier for X-band radar applications introduced by Comtech
MELVILLE, N.Y., 5 Sept. 2013. Comtech PST Corp. in Melville, N.Y., is introducing the model BMC858109-600 gallium nitride (GaN) amplifier for X-band radar applications.
MELVILLE, N.Y., 5 Sept. 2013. Comtech PST Corp. in Melville, N.Y., is introducing the model BMC858109-600 gallium nitride (GaN) power amplifier for X-band radar applications.
The AB linear design operates over the 8.5-to-10 GHz radar frequency range. Features of the RF and microwave amplifier include options for control of phase and amplitude to allow for integration into high=power systems that use conventional binary or phased-array combining approaches for power levels to 10 kilowatts.
Consistent with its planned technology development roadmap, Comtech is leading the field with the latest in GaN-based RF device performance and advanced amplifier development.
Features include RF input & output sample detectors; pulse width and duty factor protection; thermal and load VSWR protection; optional digital interface for control and status monitoring; and optional phase and amplitude control.
The power amplifier operates in temperatures from 0 to 55 degrees Celsius, resists shock and vibration per mil-std-810F, operates in altitudes to 10,000 feet, measures 10 by 8.5 by 1 inches, and weighs five pounds.
For more information contact Comtech online at www.comtechpst.com.