Raytheon to develop next-generation Gallium Nitride devices
TEWKSBURY, Mass., 14 April, 2012. Raytheon Co. (NYSE: RTN) was awarded an 18-month, $1.8 million contract by the Defense Advanced Research Projects Agency (DARPA) to develop next-generation Gallium Nitride devices bonded to diamond substrates.
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GaN's unique qualities allow radar, electronic warfare and communications systems to be smaller, more affordable and highly efficient.
Work for this contract will be performed by Raytheon IDS' Advanced Technology group at the Integrated Air Defense Center in Andover, Mass. The group specializes in contract research and development programs, particularly multifunction radar frequency systems and advanced semiconductors.