Raytheon to develop next-generation Gallium Nitride devices

TEWKSBURY, Mass., 14 April, 2012. Raytheon Co. (NYSE: RTN) was awarded an 18-month, $1.8 million contract by the Defense Advanced Research Projects Agency (DARPA) to develop next-generation Gallium Nitride devices bonded to diamond substrates.

Apr 14th, 2012
Content Dam Mae Online Articles 2012 04 Gallium
TEWKSBURY, Mass., 14 April, 2012. Raytheon Co. (NYSE: RTN) was awarded an 18-month, $1.8 million contract by the Defense Advanced Research Projects Agency (DARPA) to develop next-generation Gallium Nitride devices bonded to diamond substrates. The technology, Thermally Enhanced Gallium Nitride (TEGaN), seeks to increase the power handling capability of GaN devices by at least three times. TEGaN enables transistors and monolithic microwave integrated circuits (MMICs) to achieve their full performance potential by reducing thermal resistance. TEGaN acts as a multiplier for GaN's unique qualities, which may reduce the cost, size, weight and power of defense systems. Over the course of the 18-month contract, Raytheon seeks to develop and test TEGaN's capabilities and establish a path to technology insertion into military systems.

GaN's unique qualities allow radar, electronic warfare and communications systems to be smaller, more affordable and highly efficient.

Work for this contract will be performed by Raytheon IDS' Advanced Technology group at the Integrated Air Defense Center in Andover, Mass. The group specializes in contract research and development programs, particularly multifunction radar frequency systems and advanced semiconductors.

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