These hermetic enhancement-mode N-channel MOSFETs deliver a maximum continuous drain current of 26 to 30 amps and low RDS(ON) of 96 micro-ohms max at 20 amps and 25 degrees C.
SiC MOSFETs can increase efficiency in switching applications when replacing silicon MOSFETs. The SFC35N120 has a typical fast switching speed of less than 30 nanoseconds. With an on-resistance of 190 milliohms max at 150 C, this device also displays high temperature performance, which allows for smaller devices, facilitates parallel configurations, and reduces thermal management hardware such as fans and heatsinks.
Since silicon carbide has a higher critical breakdown field compared to silicon, silicon carbide MOSFETs can achieve the same voltage rating in a smaller package than silicon MOSFETs.
The SFC35N120 is available in the TO-257 through-hole package and two surface-mount options: the SMD.5 and Cerpack. For more information contact SSDI online at www.ssdi-power.com.
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