Infineon introduces rad-hard MOS switching devices for power supply designs in space and avionics systems
Neubiberg, Germany, 21 July 2012. Infineon Technologies AG, a European supplier of semiconductors and system components, (FSE: IFX / OTCQX: IFNNY) introduced its first power switching devices designed specifically for use in space and avionics applications.
Neubiberg, Germany, 21 July 2012. Infineon Technologies AG, a European supplier of semiconductors and system components, (FSE: IFX / OTCQX: IFNNY) introduced its first power switching devices designed specifically for use in space and avionics applications. The new radiation hardened (RH) PowerMOS devices of the BUY25CSXX family support the design of efficient power conditioning and power supply systems for space use. They combine Infineon's experience in transistors and in MOS switching devices.
The RH PowerMOS technology is hardened against Total Ionizing Dose (TID) and Single Event Effects (SEE) to offer devices that meet requirements of the European Space Agency (ESA). The devices are fully qualified according to ESCC5000.
Efficiency and reliability are critical in space applications, where size, weight and power (SWaP) restrictions on all system components require high performance matched with protection against damage from space-born radiation. Specifications of the RH PowerMOS family reflect these dual concerns, including: high Rds(on) (20mOhm for 250V device in SMD2 package), the ability to withstand more than 100 kRad TID (up to 300kRad on request), and being SEE hardened.
Infineon has released two 250V (54A and 12.4A) and one 100V (12.4A) device in the RH PowerMOS family BUY25CSXX. The 12.4A devices are available in SMD05 packages and the 54A device is available in the SMD2 package. Devices for engineering modules as well as qualified devices for flight modules are in production and can be ordered from authorized Infineon distributors.
Further information on Infineon's new HiRel RH PowerMOS transistors is available here