RF and microwave amplifiers and mixers for military sensors and SATCOM introduced by Hittite

CHELMSFORD, Mass., 14 May 2012. Hittite Microwave Corp. in Chelmsford, Mass., is introducing two RF and microwave amplifiers and three mixers for microwave & millimeter wave radios, military sensors, test & measurement equipment, and satellite communications (SATCOM) applications operating at frequencies from 24 to 46.5 GHz.

RF and microwave amplifiers and mixers for military sensors and SATCOM introduced by Hittite
RF and microwave amplifiers and mixers for military sensors and SATCOM introduced by Hittite

CHELMSFORD, Mass., 14 May 2012. Hittite Microwave Corp. in Chelmsford, Mass., is introducing two RF and microwave amplifiers and three mixers for microwave & millimeter wave radios, military sensors, test & measurement equipment, and satellite communications (SATCOM) applications operating at frequencies from 24 to 46.5 GHz.

The HMC1040LP3CE is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) that operates between 24 and 43.5 GHz and delivers 23 dB gain, 2.2 dB noise figure, and offers output IP3 as high as +22 dBm.

The component consumes 70 milliamps of power from a 2.5-volt power supply while the output P1dB rating of +12 dBm enables it to serve as a LO driver. The HMC1040LP3CE has I/Os that are DC blocked and internally matched to 50 Ohms, and is housed in a 3-by-3-millimeter QFN plastic package.

The HMC1016 is a four stage GaAs pseudomorphic high electron mobility Transistor (PHEMT) MMIC medium power amplifier die that operates between 34 and 46.5 GHz. The device provides 22 dB of gain, +26 dBm of saturated output power, and 17 percent PAE from a 6-volt supply. With output IP3 as high as +37 dBm, the HMC1016 is for high-linearity applications in point-to-point radio, as well as for military and space applications. The wideband driver amplifier occupies less than two square millimeters.

The HMC1041LC4 and HMC1042LC4 are compact I/Q MMIC mixers that cover RF frequencies from 17 to 27 GHz and from 15 to 33.5 GHz respectively. Each mixer uses two double-balanced mixer cells and a 90 degree hybrid, and is fabricated in a GaAs metal semiconductor field effect transistor (MESFET) process.

These integrated converters can be used as either image reject mixers or as single sideband upconverters with conversion losses as low as 9 dB. The HMC1041LC4 and HMC1042LC4 come in 4-by-4-millimeter QFN packages and require no external components.

The HMC1043LC3 is a special-purpose triple balanced mixer that accepts 16 to 22 GHz at the IF port and 26 to 32 GHz at the RF port. The HMC1043LC3 exhibits excellent LO/RF, LO/IF and 2 LO/IF isolation due to optimized balun structures, and requires no external components. The HMC1043LC3 operates with LO drive levels as low as 9 dBm from 7 to 11 GHz, and is for upconversion and downconversion in satellite transponder applications. The HMC1043LC3 is housed in a compact 3-by-3-millimeter QFN package and requires no external matching components.

For more information contact Hittite Microwave online at www.hittite.com.

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